Samsung on Wednesday announced the latest in the Evo SSD lineup, by launching its new entry level solid-state drive, the 840 Evo at 2013 Samsung SSD Global Summit in Korea.
840 Evo will be available in 120 GB/250 GB/500 GB/750 GB/1 TB capacities, using 19nm Toggle 2.0 TLC, compared to the Samsung SSD 840 which uses 21nm Toggle 2.0 TLC and the 840 Pro which uses 21nm Toggle MLC.
| Samsung SSD 840 EVO Specifications | |||||||
| Capacity | 120GB | 250GB | 500GB 750GB |
1000GB | |||
| Sequential Read | 540MB/s | 540MB/s | 540MB/s | 540MB/s | |||
| Sequential Write | 410MB/s | 520MB/s | 520MB/s | 520MB/s | |||
| 4KB Random Read (QD32) | 94K IOPS | 97K IOPS | 98K IOPS | 98K IOPS | |||
| 4KB Random Write (QD32) | 35K IOPS | 66K IOPS | 90K IOPS | 90K IOPS | |||
| Cache (LPDDR2) | 256MB | 512MB | 512MB | 1GB | |||
| Samsung SSD 840 EVO vs 840 Pro vs 840 vs 830 | ||||
| Samsung SSD 830 (256GB) |
Samsung SSD 840 (250GB) |
Samsung SSD 840 Pro (256GB) |
Samsung SSD 840 EVO (250 GB) |
|
| Controller | Samsung MCX | Samsung MDX | Samsung MDX | Samsung MEX |
| NAND | 27nm Toggle-Mode 1.1 MLC |
21nm Toggle-Mode 2.0 TLC |
21nm Toggle-Mode MLC |
19nm Toggle-Mode 2.0 TLC |
| Sequential Read | 520MB/s | 540MB/s | 540MB/s | 540MB/s |
| Sequential Write | 400MB/s | 250MB/s | 520MB/s | 520MB/s |
| Random Read | 80K IOPS | 96K IOPS | 100K IOPS | 97K IOPS |
| Random Write | 36K IOPS | 62K IOPS | 90K IOPS | 66K IOPS |
| Warranty | 3 years | 3 years | 5 years | 3 years |
The big thing Samsung want to push with the EVO is the increased write speed for the low capacity models. Using a new feature called ‘TurboWrite’ (more info on this as we get it), compared to the previous 840, whereby the 120 GB model was rated at 130 MB/s and 86K/32K 4K random IOPS, the new 120 GB model is hitting a rated 410 MB/s write speeds. The peak 1 TB model is rated for 540/520 MB/s sequential read and write, with 98K/90K IOPS respectively. The 1 TB models will also feature 1 GB of LPDDR2 DRAM Cache.
